3-A-005: Semi-conductors
3-5A1:
What are the two most commonly-used specifications for a junction diode?
Maximum forward current and PIV (peak inverse voltage).
Maximum forward current and capacitance.
Maximum reverse current and PIV (peak inverse voltage).
Maximum reverse current and capacitance.
3-5A2:
What limits the maximum forward current in a junction diode?
The junction temperature.
The peak inverse voltage (PIV).
The forward voltage.
The back EMF.
3-5A3:
MOSFETs are manufactured with THIS protective device built into their gate to protect the device from static charges and excessive voltages:
Zener diode.
Schottky diode.
Metal oxide varistor (MOV).
Tunnel diode.
3-5A4:
What are the two basic types of junction field-effect transistors?
N-channel and P-channel.
High power and low power.
MOSFET and GaAsFET.
Silicon FET and germanium FET.
3-5A5:
A common emitter amplifier has:
More voltage gain than a common collector.
Lower input impedance than a common base.
Less current gain than a common base.
Less voltage gain than a common collector.
3-5A6:
How does the input impedance of a field-effect transistor compare with that of a bipolar transistor?
An FET has high input impedance; a bipolar transistor has low input impedance.
One cannot compare input impedance without first knowing the supply voltage.
An FET has low input impedance; a bipolar transistor has high input impedance.
The input impedance of FETs and bipolar transistors is the same.
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